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hanbit h m f 2 m32 b4vn ,url: www.hbe.co.kr hanbit electronics co., ltd. rev.02(au gust,2002) 1 general description the h m f 2 m32 b4vn is a high - speed flash read only memory (from) module containing 8 , 388 , 608 words organized in a x32bit configuration. the module consists of four 2m x 8bit from mounted on a 144 - pin, double - sided, fr4 - printed cir cuit board. commands are written to the command register using standard microprocessor write timings. register contents serve as input to an internal state - machine, which controls the erase and programming circuitry. write cycles also internally latch addr esses and data needed for the programming and erase operations. reading data out of the device is similar to reading from 12.0v flash or eprom devices. eight chip enable inputs, (/c s0 , /c s1 , /c s2 , /c s3 , /c s4 , / cs5 , /c s6 , c s7 ) are used to enable the module s 4 bytes independently. outputs enable (/oe) and write enable (/we) can set the memory input and output.when from module is disable condition the module is becoming power standby mode, system designer can get low - power design. all module components may be powered from a single + 3.3 v dc power supply and all inputs and outputs are ttl - compatible. features w part identifications hmf2m32b4vn : 8mbyte, 144 - pin sodimm, gold w access time : 70, 90 and 120ns w high - density 8 mbyte design w high - reliability, low - power design w single + 3 v 0.5v power supply w easy memory expansion w all inputs and outputs are ttl - compatible w fr4 - pcb design w low profile 144 - pin s odimm w minimum 1 ,0 00,000 write/erase cycle w sectors erase architecture w sector group protection w temporary sector group unprotection w the used device is 2mx8bit 48pin tsop option s marking w timing 70 n s access - 70 90 n s access - 90 120 n s access - 120 w packages 144 - pin s odimm b flash - rom module 8 mbyte ( 2 m x 32bit) , 144 - pin sodimm, 3.3v part no. hmf 2 m32b 4 vn
hanbit h m f 2 m32 b4vn ,url: www.hbe.co.kr hanbit electronics co., ltd. rev.02(au gust,2002) 2 p in assignment pin front pin back pin frontl pin back pin front pin back 1 vss 2 vss 49 dq13 50 nc 97 dq22 98 nc 3 dq0 4 nc 51 dq14 52 nc 99 dq23 100 nc 5 dq1 6 nc 53 dq15 54 nc 101 v cc 102 v cc 7 dq2 8 nc 55 vss 56 vss 103 a6 104 a7 9 dq3 10 nc 57 nc 58 nc 105 a8 106 nc 11 v cc 12 v cc 59 nc 60 nc 107 vss 108 vss 13 dq4 14 nc 61 nc 62 nc 109 a9 110 a12 15 dq5 16 nc 63 v cc 64 v cc 111 a10 112 a11 17 dq6 18 nc 65 nc 66 nc 113 v cc 114 v cc 19 dq7 20 nc 67 /we 68 /oe 115 /cs2 116 nc(/cs6) 21 vss 22 vss 69 a13 70 a16 117 /cs3 118 nc(/cs7) 23 /cs0 24 nc(/cs4 ) 71 a14 72 a17 119 vss 120 vss 25 /cs1 26 nc(/cs5 ) 73 a15 74 a18 121 dq24 122 nc 27 v cc 28 v cc 75 vss 76 vss 123 dq25 124 nc 29 a0 30 a3 77 a19 78 a21 125 dq26 126 nc 31 a1 32 a4 79 a20 80 nc 127 dq27 128 nc 33 a2 34 a5 81 v cc 82 v cc 129 v cc 130 v cc 35 vss 36 vss 83 dq16 84 nc 131 dq28 132 nc 37 dq8 38 nc 85 dq17 86 nc 133 dq29 134 nc 39 dq9 40 nc 87 dq18 88 nc 135 dq30 136 ry_/by 41 dq10 42 nc 89 dq19 90 nc 137 dq31 138 /reset 43 dq11 44 nc 91 vss 92 vss 139 vss 140 vss 45 v cc 46 v cc 93 dq20 94 nc 141 nc 142 nc 47 dq12 48 nc 95 dq21 96 nc 143 v cc 144 v cc
hanbit h m f 2 m32 b4vn ,url: www.hbe.co.kr hanbit electronics co., ltd. rev.02(au gust,2002) 3 /reset from u1 - u8 ry_/by from u1 - u8 functional block dia gram dq32 dq15/a1 /oe dq 0 - 7 / ce u1 dq 8 - 15 /ce u2 dq 16 - 23 /ce u3 /we dq 24 - 31 /ce u4 /c s0 / we /oe /c s1 /c s2 /c s3 dq 0 - dq31 a0 - a20 /we a21 /we /oe /oe /we /oe a0 - 19 a0 a 1 - a20 dq15/a1 a0 - 19 dq15/a1 a0 - 19 dq15/a1 a0 - 19
hanbit h m f 2 m32 b4vn ,url: www.hbe.co.kr hanbit electronics co., ltd. rev.02(au gust,2002) 4 truth table mode /oe /ce /we dq power stand by x vcc 0.3 x high - z standby not selected h l h high - z active read l l h dout active write or erase h l l d in active note: x means don t care absolute maximum ratings parameter symbol rating voltage with respect to ground all other pins v in,out - 0 . 5 v to + 0.5 v voltage with respect to ground vcc v cc - 0 . 5 v to + 4 .0v storage temperature t stg - 65 o c to +1 50 o c operating temperature t a - 55 o c to +125 o c w stresses greater than those listed under " absolute maximum ratings" may cause per manent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. exposure to absolute maximum rat ing conditions for extended periods may affect reliability. recommended dc opera ting conditions parameter symbol min typ . max vcc for 5% device supply voltages v cc 3.0 v 3.6 v vcc for 10% device supply voltages vcc 2.7v 3.6v ground v ss 0 0 0 dc and operating cha racteristics (0 o c t a 70 o c ; vcc = 5v 0.5v ) parameter test conditions symbol min max units input leakage current vcc=vcc max, v in = gnd to vcc i l1 1.0 m a output leakage current vcc=vcc max, v out = gnd to vcc i l0 1.0 m a out put high voltage i oh = - 2.5ma, vcc = vcc min v oh 0.85* vcc v output low voltage i ol = 12ma, vcc =vcc min v ol 0.45 v vcc active current for read(1) /ce = v il , /oe=v ih , i cc1 36 64 ma vcc active current for program or erase(2) /ce = v il , /oe=v ih i cc2 8 0 120 ma vcc standby current /ce= v ih i cc3 0.8 20 ma low vcc lock - out voltage v lko 2.3 2.5 v notes: 1. the i cc current listed is typically less than 2ma/mhz, with /oe at v ih . 2. i cc active while embedded algorithm (program or erase) is in progress 3. maximum icc current specifications are tested with vcc=vcc max
hanbit h m f 2 m32 b4vn ,url: www.hbe.co.kr hanbit electronics co., ltd. rev.02(au gust,2002) 5 erase and programmin g performance limits parameter min. typ. max. unit comments sector erase time - 0.7 15 sec excludes 00h programming pr ior to erasure byte programming time - 9 3 00 m s excludes system - level overhead chip programming time - 18 54 .8 sec excludes system - level overhead capacitance parameter symbol parameter descrip tion test setup typ. max uni t c in input capacitance v in = 0 24 30 pf c out output capacitance v out = 0 34 48 12 pf c in2 control pin capacitance v in = 0 30 369 pf notes : test conditions t a = 25 o c, f=1.0 mhz. ac characteristics u read only operations characteristics paramet er symbols s peed options jedec standard description test setup 70r 80 - 90 - 12 0 unit t avav t rc read cycle time min 70 80 90 120 ns t avqv t acc address to output delay /ce = v il /oe = v il max 70 80 90 120 ns t elqv t ce chip ena ble to output delay /oe = v il max 70 80 90 120 ns t glqv t oe chip enable to output delay max 30 30 35 50 ns t ehqz t df chip enable to output high - z max 25 25 3 0 30 ns t ghqz t df output enable to output high - z max 1 25 25 30 30 ns t axqx t qh output ho ld time from addresses, /ce or /oe, whichever occurs first min 0 0 0 0 ns notes : test conditions output load : 1ttl gate and output load capacitance 100 pf , in case of 55ns - 30pf input rise and fall times : 5 ns , in c ase of 55ns - 5ns input pulse levels : 0 .45 v to 2 . 4 v , in case of 55ns - 0.0v - 3.0v timing measurement reference level input : 0.8 v , incase of 55ns - 1.5v output : 2.0 v , in case of 55ns - 1.5v
hanbit h m f 2 m32 b4vn ,url: www.hbe.co.kr hanbit electronics co., ltd. rev.02(au gust,2002) 6 u erase/program operations parameter symbols s peed options jedec standard description 70r 80 - 90 - 12 0 unit t avav t wc write cycle time min 70 80 90 120 ns t avwl t as address setup time min 0 ns t wlax t ah address hold time min 4 5 45 45 50 ns t dvwh t ds data setup time min 3 5 35 45 50 ns t whdx t dh data hold time min 0 ns t oes output enable setup time min 0 ns t ghwl t ghwl read recover time before write min 0 ns t elwl t cs /ce setup time min 0 ns t wheh t ch /ce hold time min 0 ns t wlwh t wp write pulse width min 3 5 35 4 5 50 ns t whwl t wph write pulse width high min 3 0 ns t whwh1 t whwh1 byte programming operation typ 9 m s t whwh2 t whwh2 sector erase operation (note1) typ 0.7 sec t v cs vcc set up time min 50 m s notes : 1. this does not include the preprogramming time 2. this timing is only for sector protect operations 3.3 v device under test 2.7k w diodes = in3064 or equivalent 6.2k w in3064 or equivalent c l note : c l = 100pf including jig capacitance
hanbit h m f 2 m32 b4vn ,url: www.hbe.co.kr hanbit electronics co., ltd. rev.02(au gust,2002) 7 u erase/program operations alternate /ce controlled writes parameter symbols speed option unit jedec standard description 70r 80 - 90 - 120 t a vav t wc write cycle time min 70 80 90 120 ns t avel t as address setup time min 0 ns t elax t ah address hold time min 4 5 45 45 50 ns t dveh t ds data setup time min 3 5 35 45 50 ns t ehdx t dh data hold time min 0 ns t oes output enable setup time min 0 ns t ghel t ghel read recover time before write min 0 ns t wlel t ws /we setup time min 0 ns t ehwh t wh /we hold time min 0 ns t eleh t cp /ce pulse width min 3 5 35 4 5 50 ns t ehel t cph /ce pulse width high min 20 ns t whwh1 t whwh1 byte programming ope ration typ 9 m s t whwh2 t whwh2 sector erase operation (note) typ 0.7 sec notes : this does not include the preprogramming time.
hanbit h m f 2 m32 b4vn ,url: www.hbe.co.kr hanbit electronics co., ltd. rev.02(au gust,2002) 8 u read operations timing u reset timing
hanbit h m f 2 m32 b4vn ,url: www.hbe.co.kr hanbit electronics co., ltd. rev.02(au gust,2002) 9 u program operations timing u chip/sector erase operatio n timings
hanbit h m f 2 m32 b4vn ,url: www.hbe.co.kr hanbit electronics co., ltd. rev.02(au gust,2002) 10 u data# polling times(during embedded algorithms) u toggle# bit timings (during embedded algorithms)
hanbit h m f 2 m32 b4vn ,url: www.hbe.co.kr hanbit electronics co., ltd. rev.02(au gust,2002) 11 u sector protect unprotect timeing diagram u alternate ce# controlled write operating timings
hanbit h m f 2 m32 b4vn ,url: www.hbe.co.kr hanbit electronics co., ltd. rev.02(au gust,2002) 12 package dimensions unit : mm pcb thickness: 1.0mm (1.0t - 1.1t) immersion gold pcb pattern 0.25 mm max min 2.5 5 mm 0 . 8 mm (solder & gold plating) 0.60 0.05 mm 1.0 0.1mm 2 . 3 mm max
hanbit h m f 2 m32 b4vn ,url: www.hbe.co.kr hanbit electronics co., ltd. rev.02(au gust,2002) 13 o r dering information part number density org. package components composition vcc speed hmf2m32b4vn - 70 8mbyte 2mx 32bit 144 pin - sodi mm tsop(2mx8)*4 3.3v 70ns hmf2m32b4vn - 90 8mbyte 2mx 32bit 144 pin - sodimm tsop(2mx8)*4 3.3v 90ns hmf2m32b4vn - 120 8mbyte 2mx 32bit 144 pin - sodimm tsop(2mx8)*4 3.3v 120ns

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